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Articles
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
Publication:
Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs
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Date
2016
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33964.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Tian-Li
;
Franco, Jacopo
;
Marcon, Denis
;
De Jaeger, Brice
;
Bakeroot, Benoit
;
Stoffels, Steve
;
Van Hove, Marleen
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
IEEE Transactions on Electron Devices
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1809
since deposited on 2021-10-23
Acq. date: 2026-01-10
Citations
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Views
1809
since deposited on 2021-10-23
Acq. date: 2026-01-10
Citations