Publication:

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

Date

2016
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorWu, Tian-Li
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMarcon, Denis
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T17:20:19Z
dc.date.available2021-10-23T17:20:19Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27606
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7440814
dc.source.beginpage1853
dc.source.endpage1860
dc.source.issue5
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Toward understanding positive bias temperature instability in fully recessed-gate GaN MISFETs

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
33964.pdf
Size:
2 MB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles