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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN
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1911 since deposited on 2021-10-21
Acq. date: 2025-10-23
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Views
1911 since deposited on 2021-10-21
Acq. date: 2025-10-23
Citations