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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN
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1918 since deposited on 2021-10-21
3last month
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Acq. date: 2026-08-10
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Statistics
Views
1918 since deposited on 2021-10-21
3last month
1last week
Acq. date: 2026-08-10
Citations