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Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

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dc.contributor.authorSun, Yiting
dc.contributor.authorLevrau, Elisabeth
dc.contributor.authorBlauw, Michiel
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorVerdonck, Patrick
dc.contributor.authorStruyf, Herbert
dc.contributor.authorDetavernier, Chrostophe
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorDe Feyter, Steven
dc.contributor.authorArmini, Silvia
dc.contributor.imecauthorSun, Yiting
dc.contributor.imecauthorLevrau, Elisabeth
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVerdonck, Patrick
dc.contributor.imecauthorStruyf, Herbert
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVerdonck, Patrick::0000-0003-2454-0602
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.contributor.orcidimecLevrau, Elisabeth::0000-0002-5305-8041
dc.contributor.orcidimecStruyf, Herbert::0000-0002-6782-5424
dc.date.accessioned2021-10-21T12:29:19Z
dc.date.available2021-10-21T12:29:19Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23138
dc.source.beginpageAA05.22
dc.source.conferenceAdvanced Interconnects for Micro- and Nanoelectronics - Materials, Processes, and Reliability
dc.source.conferencedate1/04/2013
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

dc.typeProceedings paper
dspace.entity.typePublication
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