Publication:

High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

Date

2017
Journal article
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dc.contributor.authorYoshida, Shinichi
dc.contributor.authorLin, Dennis
dc.contributor.authorVais, Abhitosh
dc.contributor.authorAlian, AliReza
dc.contributor.authorFranco, Jacopo
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorMols, Yves
dc.contributor.authorMiyanami, Yuki
dc.contributor.authorNakazawa, M.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorWatanabe, H.
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T19:39:50Z
dc.date.available2021-10-24T19:39:50Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn2168-6734
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29993
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8013022/
dc.source.beginpage480
dc.source.endpage484
dc.source.issue6
dc.source.journalIEEE Journal of the Electron Devices Society
dc.source.volume5
dc.title

High mobility In0.53Ga0.47As MOSFETs with steep sub-threshold slope achieved by remote reduction of native III-V oxides with metal electrodes

dc.typeJournal article
dspace.entity.typePublication
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