Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Articles
High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors
Publication:
High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors
Copy permalink
Date
2013
Journal article
https://doi.org/10.1149/2.009306jss
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hikavyy, Andriy
;
Vanherle, Wendy
;
Witters, Liesbeth
;
Vincent, Benjamin
;
Dekoster, Johan
;
Loo, Roger
Journal
ECS Journal of Solid State Science and Technology
Abstract
Description
Metrics
Views
1913
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-15
Citations
Metrics
Views
1913
since deposited on 2021-10-21
1
last month
Acq. date: 2025-12-15
Citations