High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors

dc.contributor.author	Hikavyy, Andriy
dc.contributor.author	Vanherle, Wendy
dc.contributor.author	Witters, Liesbeth
dc.contributor.author	Vincent, Benjamin
dc.contributor.author	Dekoster, Johan
dc.contributor.author	Loo, Roger
dc.contributor.imecauthor	Hikavyy, Andriy
dc.contributor.imecauthor	Vanherle, Wendy
dc.contributor.imecauthor	Witters, Liesbeth
dc.contributor.imecauthor	Vincent, Benjamin
dc.contributor.imecauthor	Dekoster, Johan
dc.contributor.imecauthor	Loo, Roger
dc.contributor.orcidimec	Hikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimec	Loo, Roger::0000-0003-3513-6058
dc.date.accessioned	2021-10-21T08:17:24Z
dc.date.available	2021-10-21T08:17:24Z
dc.date.issued	2013
dc.identifier.doi	10.1149/2.009306jss
dc.identifier.issn	2162-8769
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/22491
dc.source.beginpage	P282
dc.source.endpage	P286
dc.source.issue	6
dc.source.journal	ECS Journal of Solid State Science and Technology
dc.source.volume	2
dc.title	High Ge content SiGe selective processes for source/drain in manufacturing the next generations of pMOS transistors
dc.type	Journal article
dspace.entity.type	Publication
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