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Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

Date

2010
Proceedings Paper
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorKaczer, Ben
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.accessioned2021-10-18T22:23:07Z
dc.date.available2021-10-18T22:23:07Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18092
dc.source.beginpageO243
dc.source.conference16th Workshop on Dielectrics in Microelectronics - WoDiM
dc.source.conferencedate28/06/2010
dc.source.conferencelocationBratislava Slovak
dc.title

Temperature dependence of the emission and capture times of SiON individual traps after positive bias temperature stress

dc.typeProceedings paper
dspace.entity.typePublication
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