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Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?
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Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pantisano, Luigi
;
Afanasiev, Valeri
;
Cimino, Salvatore
;
Adelmann, Christoph
;
Goux, Ludovic
;
Chen, Yangyin
;
Kittl, Jorge
;
Wouters, Dirk
;
Jurczak, Gosia
Journal
Microelectronic Engineering
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Acq. date: 2025-12-13
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1896
since deposited on 2021-10-19
Acq. date: 2025-12-13
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Downloads
1
since deposited on 2021-10-19
Acq. date: 2025-12-13
Views
1896
since deposited on 2021-10-19
Acq. date: 2025-12-13
Citations