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Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?

Date

2011
Journal article
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dc.contributor.authorPantisano, Luigi
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorCimino, Salvatore
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorGoux, Ludovic
dc.contributor.authorChen, Yangyin
dc.contributor.authorKittl, Jorge
dc.contributor.authorWouters, Dirk
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorChen, Yangyin
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-19T17:03:49Z
dc.date.available2021-10-19T17:03:49Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19535
dc.source.beginpage1251
dc.source.endpage1254
dc.source.issue7
dc.source.journalMicroelectronic Engineering
dc.source.volume88
dc.title

Towards barrier height modulation in HfO2/TiN by oxygen scavenging - Dielectric defects or metal induced gap states?

dc.typeJournal article
dspace.entity.typePublication
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