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Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation
Publication:
Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation
Date
2014
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kao, Frank
;
Verhulst, Anne
;
Van de Put, Maarten
;
Pourghaderi, Mohammad Ali
;
Vandenberghe, William
;
Soree, Bart
;
Magnus, Wim
;
De Meyer, Kristin
Journal
Journal of Applied Physics
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1954
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1954
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations