Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation

dc.contributor.author	Kao, Frank
dc.contributor.author	Verhulst, Anne
dc.contributor.author	Van de Put, Maarten
dc.contributor.author	Pourghaderi, Mohammad Ali
dc.contributor.author	Vandenberghe, William
dc.contributor.author	Soree, Bart
dc.contributor.author	Magnus, Wim
dc.contributor.author	De Meyer, Kristin
dc.contributor.imecauthor	Kao, Frank
dc.contributor.imecauthor	Verhulst, Anne
dc.contributor.imecauthor	Soree, Bart
dc.contributor.imecauthor	Magnus, Wim
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Verhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimec	Soree, Bart::0000-0002-4157-1956
dc.date.accessioned	2021-10-22T02:28:41Z
dc.date.available	2021-10-22T02:28:41Z
dc.date.issued	2014
dc.identifier.issn	0021-8979
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24032
dc.identifier.url	http://scitation.aip.org/docserver/fulltext/aip/journal/jap/115/4/1.4862806.pdf?expires=1391088229&id=id&accname=366702&checksum
dc.source.beginpage	44505
dc.source.issue	4
dc.source.journal	Journal of Applied Physics
dc.source.volume	115
dc.title	Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation
dc.type	Journal article
dspace.entity.type	Publication
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