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TXRF layer analysis for advanced micro-electronic applications: a two case study, HfO2/Si and Si/Ge

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2005
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dc.contributor.authorHellin, David
dc.contributor.authorRip, Jens
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBonzom, Renaud
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorVinckier, Chris
dc.contributor.imecauthorHellin, David
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T01:58:49Z
dc.date.available2021-10-16T01:58:49Z
dc.date.embargo9999-12-31
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10566
dc.source.conference11th International Conference on Total Reflection X-Ray Fluorescence Spectrometry and Related Methods - TXRF
dc.source.conferencedate18/09/2005
dc.source.conferencelocationBudapest Hungary
dc.title

TXRF layer analysis for advanced micro-electronic applications: a two case study, HfO2/Si and Si/Ge

dc.typeMeeting abstract
dspace.entity.typePublication
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