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Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions

Date

2004-05
Proceedings Paper
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dc.contributor.authorSibaja-Hernandez, Arturo
dc.contributor.authorXu, Mingwei
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorSibaja-Hernandez, Arturo
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-15T16:14:21Z
dc.date.available2021-10-15T16:14:21Z
dc.date.issued2004-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9596
dc.source.beginpage234
dc.source.conferenceProgram and Abstracts Book 2nd International SiGe Technology and Device Meeting - ISTDM
dc.source.conferencedate16/05/2004
dc.source.conferencelocationFrankfurt (Oder) Germany
dc.source.endpage235
dc.title

Comprehensive study of TSUPREM4 boron diffusion modeling in SiGeC base layers under critical RTA conditions

dc.typeProceedings paper
dspace.entity.typePublication
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