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Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process
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Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process
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Date
2016
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Oliveira, Alberto V.
;
Simoen, Eddy
;
Agopian, Paula G.D.
;
Martino, Joao A
;
Mitard, Jerome
;
Witters, Liesbeth
;
Langer, Robert
;
Collaert, Nadine
;
Thean, Aaron
;
Claeys, Cor
Journal
Semiconductor Science and Technology
Abstract
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Acq. date: 2025-12-11
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Metrics
Views
1883
since deposited on 2021-10-23
1
last month
1
last week
Acq. date: 2025-12-11
Citations