Publication:

Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process

Date

2016
Journal article
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dc.contributor.authorOliveira, Alberto V.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAgopian, Paula G.D.
dc.contributor.authorMartino, Joao A
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLanger, Robert
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorLanger, Robert
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-23T13:21:36Z
dc.date.available2021-10-23T13:21:36Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27092
dc.identifier.urlhttp://iopscience.iop.org/article/10.1088/0268-1242/31/11/114002/pdf
dc.source.beginpage114002
dc.source.issue11
dc.source.journalSemiconductor Science and Technology
dc.source.volume31
dc.title

Split-CV mobility at low temperature operation of Ge pFinFETs fabricated with STI first and last process

dc.typeJournal article
dspace.entity.typePublication
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