Publication:

1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation

Date

2015
Proceedings Paper
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dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorRosseel, Erik
dc.contributor.authorPeter, Antony
dc.contributor.authorLee, Joon-Gon
dc.contributor.authorSong, Woo-Bin
dc.contributor.authorDemuynck, Steven
dc.contributor.authorChiarella, Thomas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorKubicek, Stefan
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorBarla, Kathy
dc.contributor.authorKim, Daeyong
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPeter, Antony::0000-0001-5941-0563
dc.contributor.orcidimecEveraert, Jean-Luc::0000-0002-0660-9090
dc.date.accessioned2021-10-23T01:24:16Z
dc.date.available2021-10-23T01:24:16Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26221
dc.source.beginpage592
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage595
dc.title

1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation

dc.typeProceedings paper
dspace.entity.typePublication
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