Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors

dc.contributor.author	Grasser, Tibor
dc.contributor.author	Reisinger, Hans
dc.contributor.author	Wagner, Paul-Jurgen
dc.contributor.author	Kaczer, Ben
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-18T16:43:01Z
dc.date.available	2021-10-18T16:43:01Z
dc.date.embargo	9999-12-31
dc.date.issued	2010-12
dc.identifier.issn	1098-0121
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17185
dc.source.beginpage	245318
dc.source.issue	24
dc.source.journal	Physical Review B
dc.source.volume	82
dc.title	Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors
dc.type	Journal article
dspace.entity.type	Publication
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