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On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS
Publication:
On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS
Date
2000
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yousif, M. Y. A.
;
Friesel, M.
;
Willander, M.
;
Lundgren, P.
;
Caymax, Matty
Journal
Solid-State Electronics
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1943
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1943
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations