Publication:
On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS
Date
| dc.contributor.author | Yousif, M. Y. A. | |
| dc.contributor.author | Friesel, M. | |
| dc.contributor.author | Willander, M. | |
| dc.contributor.author | Lundgren, P. | |
| dc.contributor.author | Caymax, Matty | |
| dc.contributor.imecauthor | Caymax, Matty | |
| dc.date.accessioned | 2021-10-14T14:23:18Z | |
| dc.date.available | 2021-10-14T14:23:18Z | |
| dc.date.issued | 2000 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/4964 | |
| dc.source.beginpage | 1425 | |
| dc.source.endpage | 1429 | |
| dc.source.issue | 8 | |
| dc.source.journal | Solid-State Electronics | |
| dc.source.volume | 44 | |
| dc.title | On the performance of in situ B-doped P+ poly-Si1-xGex gate material for nanometer scale MOS | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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