Publication:

Imec's defect reduction strategies for EUV single exposed 32nm pitch line and space patterns

Date

2019
Proceedings Paper
https://doi.org/10.1117/12.2539592
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dc.contributor.authorFoubert, Philippe
dc.contributor.authorDe Bisschop, Peter
dc.contributor.authorBekaert, Joost
dc.contributor.authorBeral, Christophe
dc.contributor.authorRincon Delgadillo, Paulina
dc.contributor.imecauthorFoubert, Philippe
dc.contributor.imecauthorDe Bisschop, Peter
dc.contributor.imecauthorBekaert, Joost
dc.contributor.imecauthorBeral, Christophe
dc.contributor.imecauthorRincon Delgadillo, Paulina
dc.contributor.orcidimecBekaert, Joost::0000-0003-3075-3479
dc.contributor.orcidimecBeral, Christophe::0000-0003-1356-9186
dc.date.accessioned2021-10-27T09:16:48Z
dc.date.available2021-10-27T09:16:48Z
dc.date.issued2019
dc.identifier.doi10.1117/12.2539592
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32973
dc.source.beginpage1114715
dc.source.conferenceInternational Conference on Extreme Ultraviolet Lithography 2019
dc.source.conferencedate16/09/2019
dc.source.conferencelocationMonterey, CA USA
dc.title

Imec's defect reduction strategies for EUV single exposed 32nm pitch line and space patterns

dc.typeProceedings paper
dspace.entity.typePublication
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