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Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Publication:
Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates
Date
2016
Proceedings Paper
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34474.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Su, Jie
;
Posthuma, Niels
;
Wellekens, Dirk
;
Saripalli, Yoga
;
Decoutere, Stefaan
;
Arif, Ronald
;
Papasouliotis, George
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1882
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1882
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations