Publication:

Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates

Date

2016
Proceedings Paper
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dc.contributor.authorSu, Jie
dc.contributor.authorPosthuma, Niels
dc.contributor.authorWellekens, Dirk
dc.contributor.authorSaripalli, Yoga
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorArif, Ronald
dc.contributor.authorPapasouliotis, George
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T15:17:16Z
dc.date.available2021-10-23T15:17:16Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27358
dc.source.conference58th Electronic Materials Conference - EMC
dc.source.conferencedate22/06/2016
dc.source.conferencelocationNewark, NJ USA
dc.title

Growth and implementation of carbon-doped AlGaN layers for enhancement-mode HEMTs on 200 mm Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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