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Electrical characterization of silicon-rich-oxide-based memory cells using pulsed current-voltage techniques

Date

2002
Proceedings Paper
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dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorSleeckx, Erik
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorSleeckx, Erik
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecSleeckx, Erik::0000-0003-2560-6132
dc.date.accessioned2021-10-14T22:58:09Z
dc.date.available2021-10-14T22:58:09Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6771
dc.source.beginpage471
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage474
dc.title

Electrical characterization of silicon-rich-oxide-based memory cells using pulsed current-voltage techniques

dc.typeProceedings paper
dspace.entity.typePublication
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