Publication:

Gate-all-around transistors based on vertically stacked Si nanowires

Date

2017
Proceedings Paper
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dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorKim, Min-Soo
dc.contributor.authorTao, Zheng
dc.contributor.authorWostyn, Kurt
dc.contributor.authorSchram, Tom
dc.contributor.authorKunnen, Eddy
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorDekkers, Harold
dc.contributor.authorHopf, Toby
dc.contributor.authorDevriendt, Katia
dc.contributor.authorTsvetanova, Diana
dc.contributor.authorChew, Soon Aik
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorVan Besien, Els
dc.contributor.authorRosseel, Erik
dc.contributor.authorMannaert, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorTsvetanova, Diana
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDangol, Anish
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-24T09:12:03Z
dc.date.available2021-10-24T09:12:03Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28970
dc.identifier.urlhttp://ecst.ecsdl.org/content/77/5/19.abstract
dc.source.beginpage19
dc.source.conferenceSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7
dc.source.conferencedate28/05/2017
dc.source.conferencelocationNew Orleans, LA USA
dc.source.endpage30
dc.title

Gate-all-around transistors based on vertically stacked Si nanowires

dc.typeProceedings paper
dspace.entity.typePublication
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