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Applications of Ni-based silicides to 45 nm CMOS and beyond

Date

2004
Proceedings Paper
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dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorChamirian, Oxana
dc.contributor.authorPawlak, Malgorzata
dc.contributor.authorVan Dal, Mark
dc.contributor.authorAkheyar, Amal
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorLindsay, Richard
dc.contributor.authorMaex, Karen
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.date.accessioned2021-10-15T14:10:59Z
dc.date.available2021-10-15T14:10:59Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9129
dc.source.beginpage31
dc.source.conferenceSilicon Front-End Junction Formation - Physics and Technology
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage42
dc.title

Applications of Ni-based silicides to 45 nm CMOS and beyond

dc.typeProceedings paper
dspace.entity.typePublication
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