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Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Publication:
Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing
Date
2023
Journal article
https://doi.org/10.1038/s41598-023-42747-1
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2.76 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Filho Goncalez, Walter
;
Borga, Matteo
;
Geens, Karen
;
Cingu, Deepthi
;
Chatterjee, Urmimala
;
Banerjee, Sourish
;
Vohra, Anurag
;
Han, Han
;
Minj, Albert
;
Hahn, Herwig
;
Marx, Matthias
;
Fahle, Dirk
;
Bakeroot, Benoit
;
Decoutere, Stefaan
Journal
SCIENTIFIC REPORTS
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121
since deposited on 2023-11-19
Acq. date: 2025-10-24
Views
955
since deposited on 2023-11-19
Acq. date: 2025-10-24
Citations
Metrics
Downloads
121
since deposited on 2023-11-19
Acq. date: 2025-10-24
Views
955
since deposited on 2023-11-19
Acq. date: 2025-10-24
Citations