Publication:

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

Date

2023
Journal article
https://doi.org/10.1038/s41598-023-42747-1
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dc.contributor.authorFilho Goncalez, Walter
dc.contributor.authorBorga, Matteo
dc.contributor.authorGeens, Karen
dc.contributor.authorCingu, Deepthi
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorBanerjee, Sourish
dc.contributor.authorVohra, Anurag
dc.contributor.authorHan, Han
dc.contributor.authorMinj, Albert
dc.contributor.authorHahn, Herwig
dc.contributor.authorMarx, Matthias
dc.contributor.authorFahle, Dirk
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorCingu, Deepthi
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorBanerjee, Sourish
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorHan, Han
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorFilho Goncalez, Walter
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecCingu, Deepthi::0000-0002-3042-7289
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecBanerjee, Sourish::0000-0002-4124-7881
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecHan, Han::0000-0003-2169-8332
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2024-01-31T08:49:24Z
dc.date.available2023-11-19T17:35:00Z
dc.date.available2024-01-31T08:49:24Z
dc.date.embargo2023-09-23
dc.date.issued2023
dc.description.wosFundingTextThis project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 826392. The JU receives support from the European Union's Horizon 2020 research and innovation program and Austria, Belgium, Germany, Italy, Slovakia, Spain, Sweden, Norway, Switzerland.
dc.identifier.doi10.1038/s41598-023-42747-1
dc.identifier.issn2045-2322
dc.identifier.pmidMEDLINE:37741914
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43162
dc.publisherNATURE PORTFOLIO
dc.source.beginpageArt. 15931
dc.source.endpageN/A
dc.source.issueN/
dc.source.journalSCIENTIFIC REPORTS
dc.source.numberofpages12
dc.source.volume13
dc.subject.keywordsDISLOCATIONS
dc.subject.keywordsLEAKAGE
dc.title

Development and analysis of thick GaN drift layers on 200 mm CTE-matched substrate for vertical device processing

dc.typeJournal article
dspace.entity.typePublication
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