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Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

Date

1998
Proceedings Paper
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dc.contributor.authorDe Wolf, Ingrid
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorBolt, M.
dc.contributor.authorBarla, K.
dc.contributor.authorReader, A.
dc.contributor.authorMcNally, P. J.
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-09-30T11:45:13Z
dc.date.available2021-09-30T11:45:13Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2512
dc.source.beginpage11
dc.source.conferenceProceedings of the International Symposium on Testing and Failure Analysis- ISTFA
dc.source.conferencedate16/11/1998
dc.source.conferencelocationDallas, TX USA
dc.source.endpage15
dc.title

Micro-Raman spectroscopy evaluation of the local mechanical stress in shallow trench isolation CMOS structures: correlation with defect generation and diode leakage

dc.typeProceedings paper
dspace.entity.typePublication
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