Publication:

Elastic backscattering during boron implantation in Si1-xGex

 
dc.contributor.authorBai, Quan
dc.contributor.authorDialameh, Masoud
dc.contributor.authorMorris, Richard
dc.contributor.authorVickridge, Ian
dc.contributor.authorVantomme, Andre
dc.contributor.authorMeersschaut, Johan
dc.contributor.imecauthorBai, Quan
dc.contributor.imecauthorDialameh, Masoud
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorMorris, Richard
dc.contributor.orcidimecBai, Quan::0000-0002-9946-0693
dc.contributor.orcidimecDialameh, Masoud::0000-0002-1439-590X
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecMorris, Richard::0000-0002-0902-7088
dc.date.accessioned2025-06-11T13:44:34Z
dc.date.available2024-03-01T18:13:05Z
dc.date.available2025-06-11T13:44:34Z
dc.date.issued2024
dc.description.wosFundingTextQuan Bai was funded by the China Scholarship Council [CSC number 202008510152]. The work at INSP was supported by the transnational access programme of the European Union's Horizon 2020 project RADIATE [grant number 824096]. Further, the work at imec was supported by ReMade@ARI, which is funded by the European Union as part of the Horizon Europe call HORIZON-INFRA-2021-SERV-01 under grant agreement number 101058414 and co-funded by UK Research and Innovation (UKRI) under the UK government's Horizon Europe funding guarantee [grant number 10039728] and by the Swiss State Secretariat for Education, Research and Innovation (SERI) under contract number 22.00187.
dc.identifier.doi10.1016/j.vacuum.2023.112740
dc.identifier.issn0042-207X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43610
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 112740
dc.source.endpageN/A
dc.source.issuePart A, January
dc.source.journalVACUUM
dc.source.numberofpages5
dc.source.volume219
dc.subject.keywordsNUCLEAR-REACTION ANALYSIS
dc.subject.keywordsION-IMPLANTATION
dc.subject.keywordsRUTHERFORD BACKSCATTERING
dc.subject.keywordsTHIN-FILMS
dc.subject.keywordsSIGE
dc.subject.keywordsB-11(P,ALPHA)BE-8
dc.subject.keywordsACCURACY
dc.subject.keywordsFLUENCE
dc.subject.keywordsGROWTH
dc.subject.keywordsENERGY
dc.title

Elastic backscattering during boron implantation in Si1-xGex

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: