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Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
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Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
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Date
2016
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Subirats, Alexandre
;
Capogreco, Elena
;
Degraeve, Robin
;
Arreghini, Antonio
;
Van den Bosch, Geert
;
Linten, Dimitri
;
Van Houdt, Jan
;
Furnemont, Arnaud
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1937
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Acq. date: 2025-12-10
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Views
1937
since deposited on 2021-10-23
1
last month
Acq. date: 2025-12-10
Citations