Publication:

Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

Date

2016
Proceedings Paper
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dc.contributor.authorSubirats, Alexandre
dc.contributor.authorCapogreco, Elena
dc.contributor.authorDegraeve, Robin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorFurnemont, Arnaud
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorFurnemont, Arnaud
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.contributor.orcidimecFurnemont, Arnaud::0000-0002-6378-1030
dc.date.accessioned2021-10-23T15:18:39Z
dc.date.available2021-10-23T15:18:39Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27361
dc.source.beginpage6C.4
dc.source.conferenceIEEE Reliability Physics Symposium - IRPS
dc.source.conferencedate17/04/2016
dc.source.conferencelocationPasadena, CA USA
dc.title

Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory

dc.typeProceedings paper
dspace.entity.typePublication
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