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Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory
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Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory
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Date
2018
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Florent, Karine
;
Pesic, Milan
;
Subirats, Alexandre
;
Banerjee, Kaustuv
;
Lavizzari, Simone
;
Arreghini, Antonio
;
Di Piazza, Luca
;
Potoms, Goedele
;
Sebaai, Farid
;
McMitchell, Sean
;
Popovici, Mihaela Ioana
;
Groeseneken, Guido
;
Van Houdt, Jan
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2034
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Acq. date: 2025-12-11
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Views
2034
since deposited on 2021-10-25
2
last month
Acq. date: 2025-12-11
Citations