Publication:

Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory

Date

2018
Proceedings Paper
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dc.contributor.authorFlorent, Karine
dc.contributor.authorPesic, Milan
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorLavizzari, Simone
dc.contributor.authorArreghini, Antonio
dc.contributor.authorDi Piazza, Luca
dc.contributor.authorPotoms, Goedele
dc.contributor.authorSebaai, Farid
dc.contributor.authorMcMitchell, Sean
dc.contributor.authorPopovici, Mihaela Ioana
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorDi Piazza, Luca
dc.contributor.imecauthorPotoms, Goedele
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorMcMitchell, Sean
dc.contributor.imecauthorPopovici, Mihaela Ioana
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-25T18:41:09Z
dc.date.available2021-10-25T18:41:09Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30713
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8614710
dc.source.beginpage43
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate1/12/2018
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage46
dc.title

Vertical ferroelectric HfO2 FET based on 3-D NAND architecture: towards dense low-power memory

dc.typeProceedings paper
dspace.entity.typePublication
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