Publication:

Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location

Date

2002
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorCrupi, Felice
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.accessioned2021-10-14T21:58:38Z
dc.date.available2021-10-14T21:58:38Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6459
dc.source.beginpage139
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage142
dc.title

Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location

dc.typeProceedings paper
dspace.entity.typePublication
Files

Original bundle

Name:
6309.pdf
Size:
242.1 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Conference contributions