Publication:

Hot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime

Date

2005
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorCimino, Salvatore
dc.contributor.authorPantisano, Luigi
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKwak, Dong Hwa
dc.contributor.authorCrupi, Felice
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorPaccagnella, A.
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-16T00:58:23Z
dc.date.available2021-10-16T00:58:23Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10230
dc.source.beginpage275
dc.source.conference43rd Annual IEEE International Reliability Physics Symposium Proceedings
dc.source.conferencedate17/04/2005
dc.source.conferencelocationSan Jose, CA USA
dc.source.endpage279
dc.title

Hot carrier degradation on n-channel SiO2/HfSiO MOSFETs: Effects on the devices performance and lifetime

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions