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The mechanism of mobility degradation in misfets with Al2O3 gate dielectric

Date

2002
Proceedings Paper
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dc.contributor.authorTorii, K.
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorSaito, S.
dc.contributor.authorTonomura, O.
dc.contributor.authorHiratani, M.
dc.contributor.authorManabe, Yukiko
dc.contributor.authorCaymax, Matty
dc.contributor.authorMaes, Jan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMaes, Jan
dc.date.accessioned2021-10-14T23:23:18Z
dc.date.available2021-10-14T23:23:18Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6887
dc.source.beginpage188
dc.source.conferenceSymposium on VLSI Technology: Digest of Technical Papers
dc.source.conferencedate11/06/2002
dc.source.conferencelocationHonolulu, HI USa
dc.source.endpage189
dc.title

The mechanism of mobility degradation in misfets with Al2O3 gate dielectric

dc.typeProceedings paper
dspace.entity.typePublication
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