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A wet chemical method for the determination of thickness of SiO2 layers below the nanometer level

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dc.contributor.authorDe Smedt, Frank
dc.contributor.authorStevens, G.
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorArnauts, Sophia
dc.contributor.authorMeuris, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.authorVinckier, Chris
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorArnauts, Sophia
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-06T10:57:09Z
dc.date.available2021-10-06T10:57:09Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3370
dc.source.beginpage1873
dc.source.endpage1878
dc.source.issue5
dc.source.journalJ. Electrochem. Soc.
dc.source.volume146
dc.title

A wet chemical method for the determination of thickness of SiO2 layers below the nanometer level

dc.typeJournal article
dspace.entity.typePublication
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