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Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technology
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1824 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-16
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Views
1824 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-16
Citations