Publication:

Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technology

Date

2005-11
Journal article
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dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDelhougne, Romain
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T01:29:48Z
dc.date.available2021-10-16T01:29:48Z
dc.date.issued2005-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10428
dc.source.beginpage192112-1
dc.source.endpage192112-3
dc.source.issue19
dc.source.journalApplied Physics Letters
dc.source.volume87
dc.title

Influence of dislocations in strained Si/relaxed SiGe layers on n/p-junctions in a metal-oxide-semiconductor field-effect transistor technology

dc.typeJournal article
dspace.entity.typePublication
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