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Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Publication:
Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
Date
2003
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kerber, Andreas
;
Cartier, Eduard
;
Degraeve, Robin
;
Roussel, Philippe
;
Pantisano, Luigi
;
Kauerauf, Thomas
;
Groeseneken, Guido
;
Maes, Herman
;
Schwalke, U.
Journal
IEEE Trans. Electron Devices
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1912
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1912
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations