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Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
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Charge trapping and dielectric reliability of SiO2/AI2O3 gate stacks with TiN electrodes
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Date
2003
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kerber, Andreas
;
Cartier, Eduard
;
Degraeve, Robin
;
Roussel, Philippe
;
Pantisano, Luigi
;
Kauerauf, Thomas
;
Groeseneken, Guido
;
Maes, Herman
;
Schwalke, U.
Journal
IEEE Trans. Electron Devices
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1916
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Acq. date: 2026-01-10
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Views
1916
since deposited on 2021-10-15
1
last month
1
last week
Acq. date: 2026-01-10
Citations