Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Schrimpf, Ronald D.

doi:10.1109/TNS.2023.3239844

Simple item page Full metadata Statistics

Files

Published version 5.87 MB

Author(s)

;

;

;

;

;

Van Huylenbroeck, Stefaan

;

;

;

;

;

;

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Metrics

1 since deposited on 2023-05-27

Acq. date: 2025-10-23

1261 since deposited on 2023-05-27

Acq. date: 2025-10-23

Low-Frequency Noise and Border Traps in Irradiated nMOS and pMOS Bulk Si FinFETs With SiO2/HfO2 Gate Dielectrics

Date

Files

Author(s)

Journal

Abstract

Description

Metrics

Downloads

Views

Citations

Metrics

Downloads

Views

Citations