Publication:

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Date

2023
Journal article
https://doi.org/10.1109/TED.2022.3233551
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dc.contributor.authorAsanovski, Ruben
dc.contributor.authorGrill, Alexander
dc.contributor.authorFranco, Jacopo
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorBeckers, Arnout
dc.contributor.authorKaczer, Ben
dc.contributor.authorSelmi, Luca
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorBeckers, Arnout
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecBeckers, Arnout::0000-0003-3663-0824
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2023-07-24T11:10:07Z
dc.date.available2023-02-10T03:19:29Z
dc.date.available2023-07-24T11:10:07Z
dc.date.embargo2023-04-30
dc.date.issued2023
dc.description.wosFundingTextThis work was supported in part by imec'sIndustrial Affiliation Program on Quantum Computing and Cryoelec-tronics and in part by the "Universita degli Studi di Modena e ReggioEmilia" through the "Bando giovani ricercatori 2021." The review of thisarticle was arranged by Editor G. Meneghesso
dc.identifier.doi10.1109/TED.2022.3233551
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41084
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2135
dc.source.endpage2141
dc.source.issue4
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume70
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.subject.keywordsQUANTUM
dc.subject.keywordsGATE
dc.title

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

dc.typeJournal article
dspace.entity.typePublication
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