Publication:

Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

Date

2002
Journal article
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dc.contributor.authorMarchand, B.
dc.contributor.authorCretu, B.
dc.contributor.authorGhibaudo, G.
dc.contributor.authorBalestra, F.
dc.contributor.authorBlachier, D.
dc.contributor.authorLeroux, C.
dc.contributor.authorDeleonibus, S.
dc.contributor.authorGuegan, G.
dc.contributor.authorReimbold, G.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-14T22:18:33Z
dc.date.available2021-10-14T22:18:33Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6573
dc.source.beginpage337
dc.source.endpage342
dc.source.issue3
dc.source.journalSolid-State Electronics
dc.source.volume46
dc.title

Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures

dc.typeJournal article
dspace.entity.typePublication
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