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High-resolution SILC measurements of thin SiO2 at ultra low voltages

Date

2002
Journal article
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dc.contributor.authorAresu, S.
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorDreesen, R.
dc.contributor.authorKroes, K.
dc.contributor.authorAndries, E.
dc.contributor.authorManca, Jean
dc.contributor.authorDe Schepper, Luc
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorD'Olieslaeger, Marc
dc.contributor.authorD'Haen, Jan
dc.contributor.imecauthorDe Ceuninck, Ward
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorD'Olieslaeger, Marc
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-14T21:07:16Z
dc.date.available2021-10-14T21:07:16Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5958
dc.source.beginpage1485
dc.source.endpage1489
dc.source.issue9_11
dc.source.journalMicroelectronics Reliability
dc.source.volume42
dc.title

High-resolution SILC measurements of thin SiO2 at ultra low voltages

dc.typeJournal article
dspace.entity.typePublication
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