Publication:

Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs

Date

2021
Journal article
https://doi.org/10.1109/TNS.2021.3072068
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dc.contributor.authorRony, M. W.
dc.contributor.authorSamsel, Isaak K.
dc.contributor.authorZhang, En Xia
dc.contributor.authorSternberg, Andrew
dc.contributor.authorLi, Kan
dc.contributor.authorReaz, Mahmud
dc.contributor.authorAustin, Stephanie M.
dc.contributor.authorAlles, Michael L.
dc.contributor.authorLinten, Dimitri
dc.contributor.authorMitard, Jerome
dc.contributor.authorReed, Robert A.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidextRony, M. W.::0000-0002-6707-6582
dc.contributor.orcidextLi, Kan::0000-0002-6704-3991
dc.contributor.orcidextReaz, Mahmud::0000-0002-5896-7850
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.date.accessioned2022-03-31T12:19:23Z
dc.date.available2021-11-02T16:01:58Z
dc.date.available2022-03-31T08:36:38Z
dc.date.available2022-03-31T12:19:23Z
dc.date.issued2021
dc.identifier.doi10.1109/TNS.2021.3072068
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37950
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage807
dc.source.endpage814
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages8
dc.source.volume68
dc.subject.keywordsHEAVY-ION
dc.subject.keywordsTRANSIENTS
dc.subject.keywordsMECHANISMS
dc.subject.keywordsRADIATION
dc.subject.keywordsBULK
dc.title

Single-Event-Induced Charge Collection in Ge-Channel pMOS FinFETs

dc.typeJournal article
dspace.entity.typePublication
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