Publication:

Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond

Date

2019
Proceedings Paper
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dc.contributor.authorBaudot, Sylvain
dc.contributor.authorSoussou, Assawer
dc.contributor.authorMilenin, Alexey
dc.contributor.authorHopf, Toby
dc.contributor.authorWang, Shouhua
dc.contributor.authorWeckx, Pieter
dc.contributor.authorVincent, Benjamin
dc.contributor.authorErvin, Joe
dc.contributor.authorDemuynck, Steven
dc.contributor.imecauthorBaudot, Sylvain
dc.contributor.imecauthorSoussou, Assawer
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorHopf, Toby
dc.contributor.imecauthorWang, Shouhua
dc.contributor.imecauthorWeckx, Pieter
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecWang, Shouhua::0000-0002-9105-8552
dc.date.accessioned2021-10-27T07:30:35Z
dc.date.available2021-10-27T07:30:35Z
dc.date.issued2019
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32502
dc.identifier.urlhttps://doi.org/10.1117/12.2514927
dc.source.beginpage109600N
dc.source.conferenceAdvances in Patterning Materials and Processes XXXVI
dc.source.conferencedate24/02/2019
dc.source.conferencelocationSan Jose, CA USA
dc.title

Self-aligned fin cut last patterning scheme for fin arrays of 24nm pitch and beyond

dc.typeProceedings paper
dspace.entity.typePublication
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