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Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile
Publication:
Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile
Date
2024
Journal article
https://doi.org/10.1109/TED.2024.3418292
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11.58 MB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Alaei, Mojtaba
;
Borga, Matteo
;
Fabris, Elena
;
Decoutere, Stefaan
;
Lauwaert, Johan
;
Bakeroot, Benoit
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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651
since deposited on 2024-07-19
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Downloads
106
since deposited on 2024-07-19
10
last month
2
last week
Acq. date: 2025-12-08
Views
651
since deposited on 2024-07-19
2
last month
Acq. date: 2025-12-08
Citations