Publication:

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

Date

2024
Journal article
https://doi.org/10.1109/TED.2024.3418292
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dc.contributor.authorAlaei, Mojtaba
dc.contributor.authorBorga, Matteo
dc.contributor.authorFabris, Elena
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLauwaert, Johan
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorAlaei, Mojtaba
dc.contributor.imecauthorBorga, Matteo
dc.contributor.imecauthorFabris, Elena
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecAlaei, Mojtaba::0000-0002-5815-3654
dc.contributor.orcidimecBorga, Matteo::0000-0003-3087-6612
dc.contributor.orcidimecFabris, Elena::0000-0003-1345-5111
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2024-08-22T11:56:56Z
dc.date.available2024-07-19T18:44:17Z
dc.date.available2024-08-22T11:56:56Z
dc.date.embargo2024-07-02
dc.date.issued2024
dc.description.wosFundingTextThis work was supported by the ASCENT+ Project funded by the European Union's Horizon 2020 Research and Innovation Program under Grant 871130.
dc.identifier.doi10.1109/TED.2024.3418292
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44176
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage4563
dc.source.endpage4569
dc.source.issue8
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume71
dc.subject.keywordsTHRESHOLD VOLTAGE
dc.subject.keywordsDENSITY
dc.title

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

dc.typeJournal article
dspace.entity.typePublication
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