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The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs
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The influence of fluoride based gate etch process on the current collapse of AlGaN/GaN HEMTs
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Date
2008
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18279.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lorenz, Anne
;
John, Joachim
;
Derluyn, Joff
;
Cheng, Kai
;
Das, Jo
;
Germain, Marianne
;
Borghs, Gustaaf
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1856
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Acq. date: 2025-12-15
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Views
1856
since deposited on 2021-10-17
1
last month
Acq. date: 2025-12-15
Citations